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this is information on a product in full production. july 2012 doc id 023446 rev 1 1/18 18 stb18n65m5, STD18N65M5 n-channel 650 v, 0.198 typ., 15 a mdmesh? v power mosfet in d2pak and dpak packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v dss @ t jmax r ds(on) max i d stb18n65m5 710 v < 0.22 15 a STD18N65M5 d 2 pak 1 3 2 tab 1 3 tab 2 dpak ! - v $ 4 ! " ' 3 table 1. device summary order codes marking package packaging stb18n65m5 18n65m5 d 2 pa k tape and reel STD18N65M5 dpak www.st.com free datasheet http:///
contents stb18n65m5, STD18N65M5 2/18 doc id 023446 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 free datasheet http:/// stb18n65m5, STD18N65M5 electrical ratings doc id 023446 rev 1 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit d 2 pak dpak v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 15 a i d drain current (continuous) at t c = 100 c 9.4 a i dm (1) drain current (pulsed) 60 a p tot total dissipation at t c = 25 c 110 w dv/dt (1) 1. i sd 15 a, di/dt 400 a/s; v dspeak < v (br)dss , v dd = 400 v peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d 2 pa k d pa k r thj-case thermal resistance junction-case max 1.14 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board. thermal resistance junction-pcb max 30 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 4a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar ; v dd =50 v) 210 mj free datasheet http:/// electrical characteristics stb18n65m5, STD18N65M5 4/18 doc id 023446 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 7.5 a 0.198 0.22 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1240 32 3.2 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -99-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -30-pf r g intrinsic gate resistance f = 1 mhz open drain - 3 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 7.5 a, v gs = 10 v (see figure 18 ) - 31 8 14 - nc nc nc free datasheet http:/// stb18n65m5, STD18N65M5 electrical characteristics doc id 023446 rev 1 5/18 table 7. switching times symbol parameter test conditions min. typ. max unit t d (v) t r (v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 9.5 a, r g = 4.7 , v gs = 10 v (see figure 19 and figure 22 ) - 36 7 9 11 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 15 60 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 15 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s v dd = 100 v (see figure 22 ) - 290 3.4 23.5 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 22 ) - 352 4 24 ns c a free datasheet http:/// electrical characteristics stb18n65m5, STD18N65M5 6/18 doc id 023446 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak figure 3. thermal impedance for d 2 pak figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am124 8 7v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am124 8 71v1 i d 15 10 5 0 0 10 v d s (v) 20 (a) 5 15 20 25 v g s = 6 v v g s = 7 v v g s = 8 v v g s = 9, 10 v 3 0 3 5 am12472v1 i d 15 10 5 0 3 5 v g s (v) 7 (a) 4 6 8 20 25 9 v d s = 25 v 3 0 3 5 am124 8 6v1 free datasheet http:/// stb18n65m5, STD18N65M5 electrical characteristics doc id 023446 rev 1 7/18 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =520v i d =7.5a 3 00 200 100 0 400 500 v d s (v) v d s 25 3 0 12 am12474v1 r d s (on) 0.19 0.1 8 0.17 0.16 0 6 i d (a) ( ) 4 8 0.2 0.21 0.22 v g s =10v 0.2 3 0.24 2 10 12 14 am12475v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am12476v1 e o ss 2 1 0 0 v d s (v) ( j) 400 3 200 4 5 600 6 am124 8 4v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am12471v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s = 10v i d = 7.5 a am124 83 v1 free datasheet http:/// electrical characteristics stb18n65m5, STD18N65M5 8/18 doc id 023446 rev 1 figure 14. drain-source diode forward characteristics figure 15. normalized b vdss vs temperature figure 16. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 e 0 0 20 r g ( ) ( j) 10 3 0 20 40 40 i d =9.5a v dd =400v eon eoff 60 v g s =10v 8 0 100 120 140 160 am124 8 5v1 free datasheet http:/// stb18n65m5, STD18N65M5 test circuits doc id 023446 rev 1 9/18 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform ! - v 6 ' 3 0 7 6 $ 2 ' 2 , $ 5 4 & & 6 $ $ ! - v 6 $ $ k k k k k 6 6 i 6 6 ' - ! 8 & 0 7 ) ' # / . 3 4 n & $ 5 4 6 ' ! - v ! $ $ 5 4 3 " ' ! ! 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